An electron mobility model for wurtzite GaNSCHWIERZ, Frank.Solid-state electronics. 2005, Vol 49, Num 6, pp 889-895, issn 0038-1101, 7 p.Article

Improved empirical non-linear compact model for studying intermodulation in HEMTs and LDMOSFETsSADI, Toufik; SCHWIERZ, Frank.Solid-state electronics. 2013, Vol 81, pp 91-100, issn 0038-1101, 10 p.Article

RF transistors : Recent developments and roadmap toward terahertz applicationsSCHWIERZ, Frank; LIOU, Juin J.Solid-state electronics. 2007, Vol 51, Num 8, pp 1079-1091, issn 0038-1101, 13 p.Article

Ambient and temperature dependent electric properties of backgate graphene transistorsHUMMEL, Christian; SCHWIERZ, Frank; HANISCH, Antonia et al.Physica status solidi. B. Basic research. 2010, Vol 247, Num 4, pp 903-906, issn 0370-1972, 4 p.Conference Paper

An analytical model for the threshold voltage shift caused by two-dimensional quantum confinement in undoped multiple-gate MOSFETsGRANZNER, Ralf; SCHWIERZ, Frank; POLYAKOV, Vladimir M et al.I.E.E.E. transactions on electron devices. 2007, Vol 54, Num 9, pp 2562-2565, issn 0018-9383, 4 p.Article

Theoretical Investigation of Trigate AlGaN/GaN HEMTsALSHAREF, Mohamed A; GRANZNER, Ralf; SCHWIERZ, Frank et al.I.E.E.E. transactions on electron devices. 2013, Vol 60, Num 10, pp 3335-3341, issn 0018-9383, 7 p.Article

Graphene Transistors: Status, Prospects, and ProblemsSCHWIERZ, Frank.Proceedings of the IEEE. 2013, Vol 101, Num 7, pp 1567-1584, issn 0018-9219, 18 p.Article

Quantum Effects on the Gate Capacitance of Trigate SOI MOSFETsGRANZNER, Ralf; THIELE, Stefan; SCHIPPEL, Christian et al.I.E.E.E. transactions on electron devices. 2010, Vol 57, Num 12, pp 3231-3238, issn 0018-9383, 8 p.Article

The influence of collector designs on f_max versus f_tcharacteristics for different types of Si-based RF bipolar transistorsSCHIPPEL, Christian; SCHWIERZ, Frank; JUN FU et al.Semiconductor science and technology. 2007, Vol 22, Num 1, issn 0268-1242, S76S-79Conference Paper

A model of trap-assisted tunneling in GaN/AlGaN/GaN heterostructure based on exchange timesRACKO, Juraj; BENKO, Peter; HOTOVY, Ivan et al.Applied surface science. 2014, Vol 312, pp 68-73, issn 0169-4332, 6 p.Article